Next Generation GaN-based Materials and Devices for RF Applications

GaN-based MMICs are beginning to become the ‘workhorse’ technology for high power amplifiers used in new DoD systems. So what comes after GaN? Recent advances in nitride material and device engineering show promise of significantly increased RF performance (power density, gain, efficiency, operating frequency) over conventional AlGaN/GaN HEMTs. In particular, new GaN-based material systems provide an additional degree of freedom for device optimization over transitional scaling. In this talk we present recent results on AlN/GaN, InAlN/GaN, lattice-matched Rare Earth Nitrides / GaN heteorjunction devices, as well as ternary channels (InGaN, AlGaN) based devices.