AlN/GaN Heterostructures and ICs for high power density mm-Wave operation

The talk describes the performance advances of thin barrier AlN/GaN over AlGaN/GaN structures for frequencies at E-band and W-band at 94 GHz and beyond when scaling conventional GaN HEMTs to lengths below 100 nm. The epitaxial growth is performed by MOCVD on SiC substrates. Several problems have to be overcome including ohmic contact definition, temperature control for thin films, and after device definition, device reliability. The talk gives various integrated circuit examples realized in 100 nm technology and below.