Development of epitaxial processes for GaN-on-Si for RF applications
This presentation will cover several material aspects of epitaxial stacks grown on Si (and SiC) substrates.
It will address EpiGaN’s developments to optimise the epiwafers’ performance in RF applications.
Among the subjects to be discussed are the reduction of RF losses due to the Si/AlN interface,
buffer development in terms of electron confinement and thermal behaviour, development of
epitaxy on 200mm substrates, investigations of alternative barrier configurations
(lattice-matched InAlN and ultra-thin AlN) and finally advantages of in-situ passivation.”