Dynamic Range-enhanced Electronics and Materials (DREaM)
The DREaM program will develop new materials and novel device structures to create
RF/millimeter wave transistors that enable high dynamic range RF systems. Such RF systems
fundamentally require either high transmitting power to increase the signal strength or high
linearity signal reception to minimize the spurs or noise in the spectrum. The DREaM program
will dramatically increase the output power density at the transistor level as compared to present
GaN technology. In addition, DREaM devices with intrinsically higher linearity will enable
circuit and system designs with superior reception at much lower power consumption penalties.
Thus, DREaM technology will enable RF transceiver systems to achieve the same or better RF
specifications as today while consuming much lower DC power, which will benefit systems from
large phased array applications to small apertures on power-constrained platforms. Overall, the
DREaM technology is anticipated to be foundational and impact a broad array of RF and
millimeter wave (MMW) applications.