High Power Latching-Type MEMS Switches for RF Tuning
This talk addresses the development of high-power RF MEMS switches. The switches are designed with a latching mechanism allowing them to remain in the selected state with no applied dc actuation voltage. Measured results will be presented for multi-port switches and switched-capacitor banks. High power test results will be presented illustrating the IP3 performance and power handling capability of these switches. Examples of using MEMS switches in the realization of variable delay lines and tunable matching networks for high power applications will be also presented.