The C-Band HySIC RF Energy Harvester Based on the Space Information, Communication and Energy Harvesting Technology

In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18┬Ám Si CMOS process and chip-to-wafer bonding. From them, RF-DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained.