A 150W High Efficiency Integrated Doherty Amplifier for LTE-Advanced Applications
A compact high efficiency Integrated Doherty Amplifier with an output combiner at the package plane was successfully developed. To the authors’ best knowledge, this is an Integrated Doherty amplifier structure published with the maximum output power capability so far. Compared to traditional Doherty structure, the Integrated Doherty with smaller circuit size and good RF performance. In order to validate this approach, a 150W asymmetrical LDMOS Doherty was designed. The circuit working at 1.8GHz, with 19~20 dB gain, 50% efficiency at 8 dB back-off and achieved better than -51dBc ACPR when driven with wideband 60MHz LTE signals.