Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in AlGaN/GaN HEMTs
In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.