A 1.4kW, Highly-Efficient, GaN, Partially-Matched FET for L-Band Applications

This paper describes a 1.4kW, high efficiency, partially matched, dual-channel GaN HEMT power amplifier (GaN PA) operating in the avionics transponder band 1.03–1.09 GHz. This amplifier demonstrates pulsed power greater than 1.4kW, 70% drain efficiency (DE), and 17.9 dB 3dB compressed gain with a 65V supply voltage.