MoS2 Phase-Junction-Based Schottky Diodes for RF Electronics

MoS2 could enable new kinds of electronic systems thanks to its ultrathin nature and unique transport properties. However, for many applications such as microwave detectors and rectennas, an ultrafast Schottky diode operating in the gigahertz, especially in the cellular band, is important but has not been realized in MoS2 electronics. The lack of such a technology prevents the development of high frequency RF energy harvesting based on MoS2. Here we propose a unique MoS2 semiconducting-metallic phase heterojunction, which enables a lateral MoS2 Schottky diode with a cutoff frequency about 4 GHz. Due to a novel lateral architecture and phase engineering, our MoS2 Schottky diode exhibits significantly reduced parasitic capacitance and series resistance. Moreover, our proposed MoS2 diode can be fabricated in a facile self-aligned process. Based on this technology, we demonstrate a single-stage MoS2-based RF rectifying circuit on a printed circuit board (PCB), which successfully realizes wireless energy harvesting in the cellular band (1.9 GHz).