GaN on Si with CMOS for Low Cost Advanced Phased Arrays
This talk describes a wafer-scale 3D heterogeneously integrated circuit technology combining GaN on Si and CMOS devices and its application to advanced phased array systems. In this technology, GaN HEMTs are used for power amplifiers, LNAs, switches, and other circuits requiring high power handling or high voltage swing while CMOS is leveraged for dense digital and low-power analog circuits. The combination of technologies enables a T/R module system-on-chip (SoC) with high performance RF, analog, and digital functionality. Such a single IC T/R solution will enable low cost microwave and millimeter wave phased arrays with advanced features such as PA envelope tracking and digital signal processing.